BLM9435 डाटा शीट PDF( Datasheet )

BLM9435 P-Channel Enhancement Mode MOSFET FEATURES VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A DESCRIPTION This device is produced with high cell density, DMOS trench technology, which i

Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a