डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL2301 | P-Channel Enhancement Mode Field Effect Transistor s Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2301
FEATURES
z RDS(ON)≤110mΩ@VGS=-4.5V.
Pb
z RDS(ON)≤150mΩ@VGS=-2.5V.
Lead-free
z Super high density cell design f |
GME |
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BL2301 | P-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2304 | N-Channel Power Mosfet | GME |
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BL2306 | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |