BFU580Q डाटा शीट PDF( Datasheet )

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure fT = 8.5GHz TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·High Gain ︱S21︱2 =13dB TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·Minimum Lot-to-Lot variations for

627 BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applicat