BFS17 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 1 GHz wideband transistor Product specification BFS17 DESCRIPTION NPN tra

BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High pow

BFS17,S CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol vCEO vCBO THERMAL CHARACTERISTICS Characteristi

Transistors NPN small signal transistor BFS17 BFS17 zFeatures 1) Ideal for RF applications. 2) Mixers and oscillations in TV tuners. 3) RF communications equipment. zPackaging specifications Type BFS17 Pac

Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 BFS17/BFS17R 1 23 94 9280 BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2

SMD Type Transistors NPN Transistors BFS17 (KFS17) ■ Features ● Collector Current Capability IC=25mA ● Collector Emitter Voltage VCEO=15V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0

SMD Type Transistors NPN Transistors BFS17-HF (KFS17-HF) ■ Features ● Collector Current Capability IC=25mA ● Collector Emitter Voltage VCEO=15V ● Pb−Free Package May be Available. The G−Suffix De