डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFR36 | NPN Transistor |
SGS-ATES |
|
BFR360 | NPN Silicon RF Transistor BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2 |
Infineon Technologies AG |
|
BFR360 | NPN Silicon RF Transistor BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2 |
Infineon Technologies AG |
|
BFR360 | NPN Silicon RF Transistor BFR360F
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 1
2 |
Infineon Technologies AG |
|
BFR360F | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications • Collector design supports 5 V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 |
Infineon Technologies AG |
|
BFR360L3 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-fre |
Infineon Technologies AG |
|
BFR360T | NPN Silicon RF Transistor BFR360T
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3
2 1 |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |