डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFP540FESD | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • Excellent ESD performance
typical value 1000 V (HBM) • Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 |
Infineon Technologies |
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BFP540FESD | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |