डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFP540ESD | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • High ESD robustness
typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz
Minimum noise figure NFmin |
Infineon |
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BFP540ESD | Low Noise Silicon Bipolar RF Transistor | Infineon |
www.DataSheet.in | 2017 | संपर्क |