डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFP136 | NPN Silicon RF Transistor BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling pr |
Siemens Semiconductor Group |
|
BFP136 | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe |
Infineon Technologies AG |
|
BFP136W | NPN Silicon RF Transistor BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling pr |
Siemens Semiconductor Group |
|
BFP136W | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |