BF1009S डाटा शीट PDF( Datasheet )

BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, obs

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND

BF1009SW Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled 3 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS056