डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY96D | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot |
Inchange Semiconductor |
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BDY96 | Bipolar NPN Device | Seme |
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BDY96 | NPN Transistor | INCHANGE |
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BDY96D | Silicon NPN Power Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |