BDY90 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance

BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND EQUIPMENT SWITCHING INDUSTRIAL DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors

BDY90 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device pe