डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY58 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
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BDY58 | (BDY57 / BDY58) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY57 BDY58
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Fo |
SavantIC |
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BDY58 | (BDY57 / BDY58) NPN SILICON TRANSISTORS NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS.
ABSOLUTE MAXIM |
Comset Semiconductors |
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BDY58 | HIGH CURRENT NPN SILICON TRANSISTOR BDY58
MECHANICAL DATA Dimensions in mm
4 0 .0 1 (1 .5 7 5 ) M ax.
2 2 .2 3 (0 .8 7 5 ) M ax.
1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 )
D ia .
3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 (1 .1 7 7 )
1 1 .1 8 (0 .4 4 0 ) 1 0 .6 |
Seme LAB |
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BDY58A | Bipolar NPN Device BDY58A
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 ( |
Seme LAB |
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BDY58C | Bipolar NPN Device BDY58C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 ( |
Seme LAB |
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BDY58S | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robus |
Inchange Semiconductor |
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