BDY58 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robus

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Fo

NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIM

BDY58 MECHANICAL DATA Dimensions in mm 4 0 .0 1 (1 .5 7 5 ) M ax. 2 2 .2 3 (0 .8 7 5 ) M ax. 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . 3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 (1 .1 7 7 ) 1 1 .1 8 (0 .4 4 0 ) 1 0 .6

BDY58A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (

BDY58C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robus