BDY57 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Fo

BDY57 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIM