डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY55X | Bipolar NPN Device BDY55X
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1 |
Seme LAB |
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BDY55X | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
BDY55X
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lo |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |