BDX87 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(

BDX87 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(

BDX87B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (