BDX67 डाटा शीट PDF( Datasheet )

BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in m

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX67 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power

BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switchi

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust de

BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in m

BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switchi

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust de