BDX66 डाटा शीट PDF( Datasheet )

BDX66 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX66 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current ·DARLINGTON APPLICATIONS ·Designed for power amplificat

BDX66 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switc

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust

BDX66 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switc

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust