BDX64 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust

BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switc

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust

BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switc

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust

BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switc

BDX64C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (