BDW84D डाटा शीट PDF( Datasheet )

BDW84D Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS www.DataSheet4U.com ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A C

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain

PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. Th

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83D ·Minimum Lot-to-Lot variations for robust device