डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDW53 | NPN Transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW54, BDW54A, BDW54 |
Power Innovations Limited |
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BDW53 | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDW53
DESCRIPTION ·High DC Current Gain
: hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min |
INCHANGE |
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BDW53A | NPN Transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW54, BDW54A, BDW54 |
Power Innovations Limited |
|
BDW53B | NPN Transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW54, BDW54A, BDW54 |
Power Innovations Limited |
|
BDW53C | NPN Transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW54, BDW54A, BDW54 |
Power Innovations Limited |
|
BDW53D | NPN Transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW54, BDW54A, BDW54 |
Power Innovations Limited |
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