डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDT65B | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
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BDT65B | SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS
BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio |
Comset Semiconductors |
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BDT65BF | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64F/AF/BF/CF ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
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