डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDT64 | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust d |
Inchange Semiconductor |
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BDT64 | Silicon Darlington Power Transistor SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio |
Comset Semiconductors |
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BDT64A | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust d |
Inchange Semiconductor |
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BDT64A | Silicon Darlington Power Transistor SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio |
Comset Semiconductors |
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BDT64AF | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for rob |
INCHANGE |
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BDT64B | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust d |
Inchange Semiconductor |
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BDT64B | Silicon Darlington Power Transistor SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio |
Comset Semiconductors |
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