डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDT61B | NPN Transistor isc Silicon NPN Darlington Power Transistors
BDT61/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(M |
INCHANGE |
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BDT61B | NPN Transistor www.DataSheet4U.com
BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C
● 50 W at 25°C Case Temperature ● 4 A Continuous C |
Bourns |
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BDT61BF | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDT61BF
DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60BF ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
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