BD950 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor BD950 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949 ·Minimum Lot-to-Lot va

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 BD949, BD951, BD953, BD955 BD950, B

isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F ·Minimum Lot-to-Lot variations for robust device pe