BD911 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type BD912 ·Minimum Lot-to-Lot variations f

® BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeter

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and

SEMICONDUCTORS BD909 – BD911 SILICON POWER TRANSISTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching app

BD907/909/911 BD908/910/912 COMPLEMENTARY SILICON POWER TRANSISTORS n BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base N

SEMICONDUCTOR BD911(NPN) BD912(PNP) RRooHHSS Nell High Power Products Complementary Silicon Power Transistors (15A / 100V / 90W) FEATURES Designed for general-purpose switching and amplifier applications. D