BD899 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| BD899 | NPN Transistor isc Silicon NPN Darlington Power Transistor
BD899
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-
: PC= 70 |
 INCHANGE |
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| BD899 | NPN Transistor BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BD896, BD898, BD900 and BD902 7 |
 Power Innovations Limited |
|
| BD899 | Power Transistors www.DataSheet4U.com
|
 Motorola |
|
| BD899 | (BD895 - BD899) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD896/898/900/902 ·DARLINGTON APPLICATIONS ·For use in |
 SavantIC |
|
| BD899A | NPN Transistor isc Silicon NPN Darlington Power Transistor
BD899A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-
: PC= 7 |
INCHANGE |
|
| BD899A | NPN Transistor BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BD896A, BD898A and BD900A 70 W at 2 |
Power Innovations Limited |
|
| BD899A | Power Transistors www.DataSheet4U.com
|
Motorola |
शेयर लिंक :
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