BD898 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Co

isc Silicon PNP Darlington Power Transistor BD898 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC=

SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation- : PC= 70W@ TC

BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 2

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD895A/897A/901A ·DARLINGTON APPLICATIONS ·For use in o