डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD841 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD841
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD842 |
INCHANGE |
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BD841 | Silicon Planar Epitaxial Power Transistor www.DataSheet4U.com
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NXP |
www.DataSheet.in | 2017 | संपर्क |