BD810 डाटा शीट PDF( Datasheet )

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • High

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD809 ·Minimum Lot-to-Lot variations for

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BD810 DESCRIPTION ·With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·

BD840CS~BD8200CS DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low pr

BD840CT~BD8200CT THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low pr

BD840S~BD8200S DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low prof

BD840T~BD8200T THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low prof