BD683 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD683 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 120V(Min.) ·DC Current Gain— : hFE = 750(Min)@ IC= 1.5A ·Comple

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD683 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·Complement to type BD684 ·DARLINGTON APPLICATIONS ·For audio and v

Transys Electronics L I M I T E D NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package EC B Complementary BD676, 676A, 678, 678A, 680, 680A,

NPN BD683 – BD683A SILICON DARLINGTON POWER TRANSISTORS The BD683 and BD683A are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-

BD675 SERIES NPN SILICON POWER DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in th

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS ECB BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Pack

NPN BD683 – BD683A SILICON DARLINGTON POWER TRANSISTORS The BD683 and BD683A are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-