BD651 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in

SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended f

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type

www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein

www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein

www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein