BD650 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in

SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Ty

www.DataSheet.co.kr BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applica

www.DataSheet.co.kr BD640CT~BD6200CT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applica

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement