डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD648 | PNP SILICON POWER DARLINGTONS www.DataSheet4U.com
BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS
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Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25°C Case Temperature 8 A Continuous |
Bourns Electronic Solutions |
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BD648 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in |
SavantIC |
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BD648 | Power Transistor SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended |
Comset Semiconductors |
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BD648 | PNP Transistor isc Silicon PNP Darlington Power Transistor
BD648
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement |
INCHANGE |
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BD648F | PNP Transistor isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
BD648F
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement |
INCHANGE |
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