BD647 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in

SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended f

isc Silicon NPN Darlington Power Transistor BD647 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement t

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD648F ·Minimum Lot-to-Lot variations for robust dev