BD643 डाटा शीट PDF( Datasheet )

SavantIC Semiconductor Product Specification Silicon NPN Dalington Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD644 ·DARLINGTON APPLICATIONS ·For use in ou

SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended f

isc Silicon NPN Darlington Power Transistor BD643 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement t

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD643F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD644F ·Minimum Lot-to-Lot variations for robust dev