डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD539B | NPN SILICON POWER TRANSISTORS BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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Designed for Complementary Use with the BD540 Series 45 W |
Power Innovations Limited |
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BD539B | NPN Transistor isc Silicon NPN Power Transistor
BD539B
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Complement to Type BD540B ·Minimum Lot-to-Lot |
INCHANGE |
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