BD500 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistors BD500/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) -80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device perfor

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Ter

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Ter

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Ter

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Ter

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Ter

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA Mechanical Data  Case: 13mm Bosch Type Press-Fit  Ter