BD315 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BD315 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A ·Complement

Model BD3150N50100AHF Rev D PRELIMINARY Ultra Low Profile 0404 Balun 50Ω to 100Ω Balanced Description The BD3150N50100AHF is a low cost, low profile sub-miniature unbalanced to balanced transformer designed