डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD301 | NPN Transistor isc Silicon NPN Power Transistor
BD301
DESCRIPTION ·DC Current Gain -
: hFE =30(Min.)@ IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min.) ·Complement to Type BD302 ·Minimum Lot-to-Lot vari |
INCHANGE |
|
BD301N | 30 AMP BLOCK DIODES BD301N THRU BD301P
30 AMP BLOCK DIODES
特征 FEATURES
.大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die constructio |
ShunYe |
|
BD301P | 30 AMP BLOCK DIODES BD301N THRU BD301P
30 AMP BLOCK DIODES
特征 FEATURES
.大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die constructio |
ShunYe |
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