BD242B डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- B

BD241A/B/C ® BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-bas

BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Rat

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Coll

BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Co

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BD242/A/B/C DESCRIPTION ·With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching