BD241B डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 10

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241B/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Colle

BD241A/B/C ® BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-bas

BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Rati

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Colle

BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collect

NPN BD241 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transis