डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD236 | COMPLEMENTARY SILICON POWER TRANSISTORS BD235/BD236 BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic pack |
STMicroelectronics |
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BD236 | PNP Transistor BD234/236/238
BD234/236/238
Medium Power Linear and Switching Applications
• Complement to BD 233/235/237 respectively
1
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Max |
Fairchild Semiconductor |
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BD236 | Silicon PNP Transistor BD234 BD236
1D238I
SILICON PNP EPITAXIAL BASE MESA TYPE
AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATIONS IN TV.
FEATURES . Designed for Complementary Use with BD233, BD235
and BD237 |
Toshiba |
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BD236 | EPITAXIAL SILICON POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD233 BD235 BD237 NPN
BD234 BD236 BD238 PNP
TO126 Plastic Package
Intended |
CDIL |
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BD236 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD234/236/238
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD233/235/237 ·Minimum Lot-to-Lot variations for robust de |
Inchange Semiconductor |
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BD236 | SILICON PNP POWER TRANSISTORS BD234 BD236 BD238
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD234, BD236, and BD238 are silicon PNP power transistors designed for medium power a |
Central Semiconductor |
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BD236 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD234/236/238 TRANSISTOR (PNP)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
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JCST |
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