BD137 डाटा शीट PDF( Datasheet )

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Po

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD138 ·Minimum Lot-to-Lot variatio

UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1 SOT-223 1 TO-126  ORDERING INFORMATION Ordering Numb

BD135 BD137 BD139 NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier a

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear an

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear an