डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BD131 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD131
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 45V(Min.) ·Complement to type BD132 |
INCHANGE |
|
BD131 | NPN power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131 NPN power transistor
Product specification Supersedes data of 1997 Mar 04 1999 Apr 12
Philips Semiconductors
Product specification
NPN powe |
NXP |
|
BD131 | SILICON PLANAR EPITAXIAL POWER TRANSISTORS NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD132 Compliance to RoHS.
ABSOLUTE MAXI |
Comset Semiconductors |
www.DataSheet.in | 2017 | संपर्क |