BD131 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) ·Complement to type BD132

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN powe

NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD132 Compliance to RoHS. ABSOLUTE MAXI