| No. | Partie # | Fabricant | Description | Fiche Technique |
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GME |
PNP Amplifier For general AF applications. High current gain. Pb Lead-free Low collector-emitter saturation voltage. Complementary types:BCW65,BCW66(NPN). BCW67/BCW68 APPLICATIONS This device is designed for general purpose amplifier and switching a |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Diodes |
PNP Transistor • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat) < -300mV @ 100mA • Complementary NPN Type: BCW66H • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (N |
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SeCoS |
PNP Transistor Complementary to BCW66. MARKING: BCW68F:DF BCW68G:DG BCW68H:DH COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
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nexperia |
PNP Transistor and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM hFE collector-emitter voltage collector current pea |
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Micro Commercial Components |
PNP Small Signal Transistor 330mW omponents 21201 Itasca Street Chatsworth !"# $ % !"# BCW68H PNP Small Signal Transistor 330mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Curr |
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Multicomp |
PNP Transistor tFor general AF applications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW65,BCW66(NPN) Applications: t and switching applications BCW67/BCW68 Ordering Information Type No. BCW67A/B/C BCW68F/G/H Markin |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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CDIL |
Transistor BCW67C, 68H IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE min. max. hFE min. hFE min. hFE min. 250 630 35 60 100 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector –base voltage (open emitter) –VCBO C |
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SEMTECH |
PNP Transistor B = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Collector Emitter Saturation Vo |
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