BCW60D डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product specification Supersedes data of 1997 Mar 10 1999 Apr 22 Philips Semiconductors Product speci

NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary type

BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:

BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Curr

BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Vo

SMD Type NPN General Purpose Transistors BCW60A/B/C/D Transistors IC SOT-23 Unit: mm Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.