BCW32 डाटा शीट PDF( Datasheet )

BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 1. Base 2. Emitter 3

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product s

NPN General Purpose Amplifier FEATURES z Low current(max.100mA). z Low voltage(max.32V). Pb Lead-free Production specification BCW31/32/33 APPLICATIONS z General purpose switching and amplification. ORDERI

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW29/30. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emi

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO Vebo ic THERMAL CHARACTERISTICS Characteristic Symbol •Total

SMD Type TransistIoCrs NPN General Purpose Transistors BCW31,BCW32,BCW33 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.