डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BCR3PM-12L | Triac BCR3PM-12L
Triac
Low Power Use
REJ03G0301-0200 Rev.2.00 Nov.08.2004
Features
• IT (RMS) : 3 A • VDRM : 600 V www.DataSheet4U.com • IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5 • Viso : 2000 V • Insulated |
Renesas Technology |
|
BCR3PM-12LA | Triac BCR3PM-12LA
Triac
Low Power Use
Preliminary Datasheet
R07DS0097EJ0300 (Previous: REJ03G0301-0200)
Rev.3.00 Sep 13, 2010
Features
IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA (10 mA)N |
Renesas |
|
BCR3PM-12LB | Triac Preliminary Datasheet
BCR3PM-12LB
Triac
R07DS0098EJ0300
Low Power Use
(Previous: REJ03G0459-0200)
Rev.3.00
(The product guaranteed maximum junction temperature of 150C)
Sep 13, 2010
Features
IT |
Renesas |
|
BCR3PM-12LG | Triac www.DataSheet4U.com
BCR3PM-12LG
Triac
Medium Power Use
REJ03G1506-0100 Rev.1.00 Feb 14, 2007
Features
• • • • IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA Viso : 2000 V • The Product g |
Renesas Technology |
|
BCR3PM-12LG | Thyristor isc Thyristors
INCHANGE Semiconductor
BCR3PM-12LG
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
an |
INCHANGE |
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