BCR3PM डाटा शीट PDF( Datasheet )

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS φ3.2±0.2

BCR3PM-12L Triac Low Power Use REJ03G0301-0200 Rev.2.00 Nov.08.2004 Features • IT (RMS) : 3 A • VDRM : 600 V www.DataSheet4U.com • IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5 • Viso : 2000 V • Insulated

BCR3PM-12LA Triac Low Power Use Preliminary Datasheet R07DS0097EJ0300 (Previous: REJ03G0301-0200) Rev.3.00 Sep 13, 2010 Features  IT (RMS) : 3 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 20 mA (10 mA)N

Preliminary Datasheet BCR3PM-12LB Triac R07DS0098EJ0300 Low Power Use (Previous: REJ03G0459-0200) Rev.3.00 (The product guaranteed maximum junction temperature of 150C) Sep 13, 2010 Features  IT

www.DataSheet4U.com BCR3PM-12LG Triac Medium Power Use REJ03G1506-0100 Rev.1.00 Feb 14, 2007 Features • • • • IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA Viso : 2000 V • The Product g

isc Thyristors INCHANGE Semiconductor BCR3PM-12LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance an

BCR3KM-14L Triac Low Power Use REJ03G0330-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 3 A • VDRM : 700 V www.DataSheet4U.com • IFGTI, IRGTI, IRGTⅢ : 30 mA • Viso : 2000 V • Insulated Type • P