डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BCR2PM | Triac BCR 2PM
BCR2PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions in mm
2.8
1.2
8.5
17 5.0
13.5 MIN 3.6
TYPE NAME
V |
Mitsubishi Electric Semiconductor |
|
BCR2PM-12 | Triac BCR2PM-12
Triac
Low Power Use
REJ03G0300-0100 Rev.1.00 Aug.20.2004
Features
• IT (RMS) : 2 A • VDRM : 600 V www.DataSheet4U.com • IRGTI, IRGTⅢ : 10 mA • Non-Insulated Type • Planar Passivation Type |
Renesas Technology |
|
BCR2PM-12RE | Triac BCR2PM-12RE
600V - 2A - Triac
Low Power Use
Preliminary Datasheet
R07DS1239EJ0200 (Previous: REJ03G1468-0100)
Rev.2.00 Dec 24, 2014
Features
• IT (RMS) : 2 A • VDRM : 600 V • IRGTI, IRGT III : 10 mA
|
Renesas Technology |
|
BCR2PM-12RE | Thyristor isc Thyristors
INCHANGE Semiconductor
BCR2PM-12RE
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
an |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |